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| SI4473BDY New Product Vishay Siliconix P-Channel 14-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -14 FEATURES ID (A) -13 -10 rDS(on) (W) 0.011 @ VGS = -4.5 V 0.018 @ VGS = -2.5 V D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices S SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4473BDY--E3 (lLead Free) SI4473BDY-T1--E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State -14 "12 Unit V -13 -9.9 -50 -2.3 2.5 1.6 -55 to 150 -9.8 -7.8 A -1.34 1.5 0.94 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72691 S-32676--Rev. A, 29-Dec-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 15 Maximum 50 85 18 Unit _C/W C/W 1 SI4473BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -14 V, VGS = 0 V VDS = -14 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -13 A VGS = -2.5 V, ID = -2.5 A VDS = -17 V, ID = -13 A IS = -2.3 A, VGS = 0 V -30 0.009 0.014 45 -0.7 -1.1 0.011 0.018 -0.6 -1.4 "100 -1 -10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -2.3 A, di/dt = 100 A/ms VDD = -15 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W f = 1 MHz 1.5 VDS = -10 V, VGS = -4.5 V, ID = -13 A 53 11 22 2.7 55 95 140 140 81 4.5 85 145 210 210 120 ns W 80 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 5 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 30 40 50 Transfer Characteristics 30 20 2V 10 1.5 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 20 TC = 125_C 10 25_C 0 0.0 -55_C 1.5 2.0 2.5 3.0 0.5 1.0 VGS - Gate-to-Source Voltage (V) Document Number: 72691 S-32676--Rev. A, 29-Dec-03 www.vishay.com 2 SI4473BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 6400 5600 C - Capacitance (pF) 0.04 4800 4000 3200 2400 1600 800 0.00 0 10 20 30 40 50 0 0 2 4 6 8 10 12 14 Crss Coss Ciss Vishay Siliconix Capacitance 0.03 VGS = 2.5 V VGS = 4.5 V 0.01 0.02 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 13 A 4 r DS(on) - On-Resistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) 0.6 -50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 13 A 3 2 1 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.060 0.050 0.040 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) ID = 13 A 0.030 ID = 2.5 A 0.020 0.010 0.000 TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72691 S-32676--Rev. A, 29-Dec-03 www.vishay.com 3 SI4473BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 30 25 ID = 250 mA Power (W) 20 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) 0.2 15 10 0.0 -0.2 5 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 rDS(on) Limited 10 I D - Drain Current (A) Safe Operating Area IDM Limited P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72691 S-32676--Rev. A, 29-Dec-03 SI4473BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72691 S-32676--Rev. A, 29-Dec-03 www.vishay.com 5 |
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